? semiconductor components industries, llc, 2010 october, 2010 ? rev. 5 1 publication order number: ntjd4401n/d ntjd4401n small signal mosfet 20 v, dual n ? channel, sc ? 88 esd protection features ? small footprint (2 x 2 mm) ? low gate charge n ? channel device ? esd protected gate ? same package as sc ? 70 (6 leads) ? pb ? free packages are available applications ? load power switching ? li ? ion battery supplied devices ? cell phones, media players, digital cameras, pdas ? dc ? dc conversion maximum ratings (t j = 25 c unless otherwise stated) parameter symbol value unit drain ? to ? source voltage v dss 20 v gate ? to ? source voltage v gs 12 v continuous drain current (based on r ja ) steady state t a = 25 c i d 0.63 a t a = 85 c 0.46 power dissipation (based on r ja ) steady state t a = 25 c p d 0.27 w t a = 85 c 0.14 continuous drain current (based on r jl ) steady state t a = 25 c i d 0.91 a t a = 85 c 0.65 power dissipation (based on r jl ) steady state t a = 25 c p d 0.55 w t a = 85 c 0.29 pulsed drain current t 10 s i dm 1.2 a operating junction and storage temperature t j , t stg ? 55 to 150 c continuous source current (body diode) i s 0.63 a lead temperature for soldering purposes (1/8? from case for 10 s) t l 260 c thermal resistance ratings (note 1) parameter symbol typ max units junction ? to ? ambient ? steady state r ja 400 460 c/w junction ? to ? lead (drain) ? steady state r jl 194 226 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. surface mounted on fr4 board using 1 oz cu area = 0.9523 in sq. marking diagram & pin assignment http://onsemi.com v (br)dss r ds(on) typ i d max 20 v 0.29 @ 4.5 v 0.36 @ 2.5 v 0.63 a see detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. ordering information td m 1 6 1 td = device code m = date code = pb ? free package d1 g2 s2 s1 g1 d2 (note: microdot may be in either location) top view sc ? 88 (sot ? 363) d 1 g 2 s 2 s 1 g 1 6 5 4 1 2 3 d 2 sc ? 88/sot ? 363 case 419b style 28
ntjd4401n http://onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise stated) parameter symbol test condition min typ max unit off characteristics drain ? to ? source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 20 27 v drain ? to ? source breakdown voltage temperature coefficient v (br)dss /t j 22 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = 16 v 1.0 a gate ? to ? source leakage current i gss v ds = 0 v, v gs = 12 v 10 a on characteristics (note 2) gate threshold voltage v gs(th) v gs = v ds , i d = 250 a 0.6 0.92 1.5 v gate threshold temperature coefficient v gs(th) /t j ? 2.1 mv/ c drain ? to ? source on resistance r ds(on) v gs = 4.5 v, i d = 0.63 a 0.29 0.375 v gs = 2.5 v, i d = 0.40 a 0.36 0.445 forward transconductance g fs v ds = 4.0 v, i d = 0.63 a 2.0 s charges and capacitances input capacitance c iss v gs = 0 v, f = 1.0 mhz, v ds = 20 v 33 46 pf output capacitance c oss 13 22 reverse transfer capacitance c rss 2.8 5.0 total gate charge q g(tot) v gs = 4.5 v, v ds = 10 v, i d = 0.63 a 1.3 3.0 nc threshold gate charge q g(th) 0.1 gate ? to ? source charge q gs 0.2 gate ? to ? drain charge q gd 0.4 switching characteristics (note 3) turn ? on delay time td (on) v gs = 4.5 v, v dd = 10 v, i d = 0.5 a, r g = 20 0.083 s rise time tr 0.227 turn ? off delay time td (off) 0.786 fall time tf 0.506 drain ? source diode characteristics forward diode voltage v sd v gs = 0 v, i s =0.23 a t j = 25 c 0.76 1.1 v t j = 125 c 0.63 reverse recovery time t rr v gs = 0 v, di s /dt = 100 a/ s, i s = 0.63 a 0.410 s 2. pulse test: pulse width 300 s, duty cycle 2%. 3. switching characteristics are independent of operating junction temperatures.
ntjd4401n http://onsemi.com 3 typical performance curves (t j = 25 c unless otherwise noted) 0 1.4 1 6 2 v ds , drain ? to ? source voltage (volts) i d, drain current (amps) 0.6 0.2 0 figure 1. on ? region characteristics 0.4 1.2 2 1.2 2.4 1 0.6 0.2 0.8 0 0 figure 2. transfer characteristics v gs , gate ? to ? source voltage (volts) 0.1 0.4 1 0.3 0.2 0 figure 3. on ? resistance vs. drain current and temperature i d, drain current (amps) r ds(on), drain ? to ? source resistance ( ) i d, drain current (amps) figure 4. on ? resistance vs. drain current and temperature ? 50 0 ? 25 25 1.4 1.2 1 0.8 0.6 50 125 100 figure 5. on ? resistance variation with temperature t j , junction temperature ( c) t j = 25 c 0.7 0.2 0.6 t j = ? 55 c t j = 125 c 75 150 i d = 0.63 a v gs = 4.5 v and 2.5 v r ds(on), drain ? to ? source resistance (normalized) 4 25 c 2 1.2 v 0 1.4 figure 6. capacitance variation 1.4 v 1.6 v 1.8 v 10 8 v ds 10 v 0.4 v gs = 2 v v gs = 4.5 v to 2.2 v 0.4 0.8 1.2 0.8 0.4 1.6 t j = 125 c 1.2 0.8 v gs = 4.5 v t j = ? 55 c t j = 25 c 0.1 0.4 1 0.3 0.2 0 i d, drain current (amps) r ds(on), drain ? to ? source resistance ( ) 0.7 0.2 0.6 t j = 125 c 0 1.4 0.4 1.2 0.8 v gs = 2.5 v t j = ? 55 c t j = 25 c v gs = 0 v 10 0 80 60 40 20 0 drain ? to ? source voltage (volts) c, capacitance (pf) t j = 25 c c oss c iss c rss 520 15 0.6 0.5 0.5 0.6 1.8 1.6
ntjd4401n http://onsemi.com 4 typical performance curves (t j = 25 c unless otherwise noted) v gs figure 7. gate ? to ? source and drain ? to ? source voltage vs. total charge 0 0.6 4 1 0 figure 8. diode forward voltage vs. current q g , total gate charge (nc) v gs, gate ? to ? source voltage (volts) i d = 0.63 a t j = 25 c 1 0.8 2 3 5 0.4 0.2 1.4 0.8 0.1 0 v sd , source ? to ? drain voltage (volts) i s , source current (amps) v gs = 0 v 0.7 0.6 0.4 0 0.4 0.5 0.6 0.2 0.3 1 0.2 t j = 25 c t j = 150 c 1.2 q g(tot) q gs q gd ordering information device package shipping ? NTJD4401NT1 sc ? 88 3000 / tape & reel NTJD4401NT1g sc ? 88 (pb ? free) 3000 / tape & reel ntjd4401nt2 sc ? 88 3000 / tape & reel ntjd4401nt2g sc ? 88 (pb ? free) 3000 / tape & reel ntjd4401nt4 sc ? 88 10,000 / tape & reel ntjd4401nt4g sc ? 88 (pb ? free) 10,000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
ntjd4401n http://onsemi.com 5 package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 419b ? 01 obsolete, new standard 419b ? 02. e 0.2 (0.008) mm 123 d e a1 a a3 c l 654 ? e ? b 6 pl sc ? 88/sc70 ? 6/sot ? 363 case 419b ? 02 issue w dim min nom max millimeters a 0.80 0.95 1.10 a1 0.00 0.05 0.10 a3 b 0.10 0.21 0.30 c 0.10 0.14 0.25 d 1.80 2.00 2.20 0.031 0.037 0.043 0.000 0.002 0.004 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 min nom max inches 0.20 ref 0.008 ref h e h e e 1.15 1.25 1.35 e 0.65 bsc l 0.10 0.20 0.30 2.00 2.10 2.20 0.045 0.049 0.053 0.026 bsc 0.004 0.008 0.012 0.078 0.082 0.086 mm inches scale 20:1 0.65 0.025 0.65 0.025 0.50 0.0197 0.40 0.0157 1.9 0.0748 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* style 26: pin 1. source 1 2. gate 1 3. drain 2 4. source 2 5. gate 2 6. drain 1 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?t ypicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license un der its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended f or surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in a ny manner. ntjd4401n/d publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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